|
[1] 中正理工學院電子工程研究所碩士論文 波長1.55微米電流阻隔式光柵砷化鋁鎵銦應力多重量子井分佈回授式雷射之研製 余福敏 (1999). [2] I. Hino, A. Gomyo, K. Kobayashi, T. Suzuki, and K. Nishida, “Room-temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metal-organic chemical vapor deposition, ”Applied Physics Letters, Vol. 43, pp. 987-989, 1983. [3] H. Asahi, Y. Kawamura, and H. Nagai, “Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66-0.68 um at room temperature,” Journal of Applied Physics, Vol. 54, pp. 6958-6964, 1983. [4] D. C. Tran, K. H. Levin, C. F. Fisher, M. J. Burk, and G. H. S. Jun, “0.66 mm room-temperature operation of InGaAlP DH laser diodes grown by MBE,” Electronics Letters, Vol. 19, pp. 163-164, 1983. [5] M. Ikeda, Y. Mori, M. Takiguchi, K. Kaneko, and N. Watanabe, “Cw operation of an AlGaInP double heterostructure laser diode at 77K grown by atmospheric metal-organic chemical vapor deposition,” Applied Physics Letters, Vol. 45, pp. 661-663, 1984. [6] M. Ikeda, Y. Mori, H. Sato, K. Kaneko, and N. Watanabe, “Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metal-organic chemical vapor deposition,” Applied Physics Letters, Vol. 47, pp. 1027-1028, 1985. [7] K. Kobayashi, S. Kawata, A. Gomyo, I. Hino, and T. Suzuki, “Room-temperature cw operation of AlGaInP double-heterostructure visible lasers,” Electronics Letters, Vol. 21, pp. 931-932, 1985. [8] M. Ishikawa, Y. Ohba, H. Sugawara, M. Yamamoto, and T. Nakanisi, “Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metal-organic chemical vapor deposition,” Applied Physics Letters, Vol. 48, pp. 207-208, 1986. [9] 國立彰化師範大學物理研究所碩士論文 黃綠光磷化鋁鎵銦發光二極體與面射型半導體雷射光學特性之研究 黃雅蓮 (2001). [10] M. Ikeda, M. Honda, Y. Mori, K. Kaneko, and N. Watanabe, “Yellow-emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metal-organic chemical vapor deposition,” Applied Physics Letters, Vol. 45, pp. 964-966, 1984. [11] I. Hino, S. Kawata, A. Gomyo, K. Kobayashi, and T. Suzuki, “Continuous wave operation (77 K) of yellow (583.6 nm) emitting AlGaInP double heterostructure laser diodes,” Applied Physics Letters, Vol. 48, pp. 557-558, 1986. [12] K. Kobayashi, S. Kawata, A. Gomyo, I. Hino, and T. Suzuki, “661.7nm room-temperature cw operation of AlGaInP double-heterostructure lasers with aluminum-containing quaternary active layer,” Electronics Letters, Vol. 21, pp. 1162-1163, 1985. [13] S. Kawata, K. Kobayashi, A. Gomyo, I. Hino, and T. Suzuki, “621nm cw operation (00C) of AlGaInP visible semiconductor lasers,” Electronics Letters, Vol. 22, pp. 1265-1266, 1986. [14] S. Kawata, H. Fujii, K. Kobayashi, A. Gomyo, I. Hino, T. Suzuki “Room-temperature continuous-wave operation of a 640nm AlGaInP visible-light semiconductor laser,” Electronics Letters, Vol. 23, pp. 1327-1328, 1987. [15] M. Ishikawa, H. Shiozawa, Y. Tsuburai, and Y. Uematsu, “Short-Wavelength (638nm) room-temperature cw operation of InGaAlP laser diodes with quaternary active layer,” Electronics Letters, Vol. 26, pp. 211-213, 1990. [16] K. Itaya, M. Ishikawa, and Y. Uematsu, “636nm room temperature cw operation by heterobarrier blocking structure InGaAlP laser diodes,” Electronics Letters, Vol. 26, pp. 839-840, 1990. [17] M. Ikeda, A. Toda, K. Nakano, Y. Mori, and N. Watanabe, “Room-temperature continuous-wave operation of a GaInP/AlGaInP multi-quantum well laser grown by metalorganic chemical vapor deposition,” Applied Physics Letters, Vol. 50, pp. 1033-1034, 1987. [18] J. M. Dallesasse, D. W. Nam, D. G. Deppe, and N. Holonyak, Jr., “Short-wavelength (<6400 Å ) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers,” Applied Physics Letters, Vol. 53, pp. 1826-1828, 1988. [19] S. Kawata, K. Kobayashi, H. Fujii, I. Hino, A. Gomyo, H. Hotta, and T. Suzuki, “Room-temperature, continuous-wave operation formode-stabilised AlGaInP visible-light semiconductor laser with a multi-quantum-well active layer,” Electronics Letters, Vol. 24, pp. 1489-1490, 1988. [20] M. Ikeda, E. Morita, A. Toda, T. Yamamoto, and K. Kaneko, “GaInP/AlGaInP double-heterostructure laser grown on a (111)B-orienten GaAs substrate by metal-organic chemical vapor deposition,” Electronics Letters, Vol. 24, pp. 1094-1095, 1988. [21] T. Tanaka, S. Minagawa, T. Kawano, and T. Kajimura, “Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from (100) plane of GaAs substrate,” Electronics Letters, Vol. 25, pp. 905-907, 1989. [22] S. Minagawa, T. tanaka, and M. Kondow, “Room-temperature continuous-wave operation of short-wavelength GaInP/AlGaInP laser grown on (511)A GaAs substrate by metal-organic vapor phase epitaxy,” Electronics Letters, Vol. 25, pp. 925-926, 1989. [23] H. Hamada, K. Tominaga, M. Shono, S. Honda, K. Yodoshi, and T. Yamaguchi, “Room-temperature cw operation of 610nm band AlGaInP strained multi-quantum well laser diodes with multi-quantum barrier,” Electronics Letters, Vol. 28, pp. 1834-1836, 1992. [24] Y. Ueno, K. Endo, H. Fujii, K. Kobayashi, K. Hara, and T. Yuasa, “Continuous-wave high-power (75mW) operation of a transverse-mode stabilized window-structure 680nm AlGaInP visible laser diode,” Electronics Letters, Vol. 26, pp. 1726-1728, 1990. [25] H. Fujii, K. Kobayashi, S. Kawata, A. Gomyo, I. Hino, H. Hotta, and T. Suzuki, “High-power operation of a transverse-mode stabilized AlGaInP visible light (lL = 683nm) semiconductor laser,” Electronics Letters, Vol. 23, pp. 938-939, 1987. [26] A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, and I. Hino, “Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy,” Applied Physics Letters, Vol. 50, pp. 673-675, 1987. [27] K. Itaya, Y. Watanabe, M. Ishikawa, G. Hatakoshi, and Y. Uematsu, “High-power operation of heterobarrier blocking structure InGaAlP visible light laser diodes,” Applied Physics Letters, Vol. 56, pp. 1718-1719, 1990. [28] K. Itaya, G. Hatakoshi, Y. Watanabe, M. Ishikawa, and Y. Uematsu, “High-power cw operation of broad area InGaAlP visible light laser diodes,” Electronics Letters, Vol. 26, pp. 214-215, 1990. [29] K. Nakano, M. Ikeda, A. Toda, and C. Kojima, “Very low threshold current density of a GaInP/AlGaInP double-hererostructure laser grown by MOCVD,” Electronics Letters, Vol. 23, pp. 894-895, 1987. [30] I. Nomura, K. Kishino, A. Kikuchi, and Y. Kaneko, “600-nm-range GaInP/AlInP strained quantum well lasers grown by gas source molecular beam epitaxy,” Japanese Journal of Applied Physics, Vol. 33, pp. 804-810, 1994. [31] H. D. Summers, and P. Blood, “Strain effects in (AlyGa1-y)xIn1-xP lasers operating at fixed threshold gain,” Electronics Letters, Vol. 30, pp. 236-238, 1994. [32] H. Shiozawa, H. Okuda, M. Ishikawa, G.-I. Hatakoshi, and Y. Uematsu, “High-temperature cw operation of visible light-emitting GaInP/AlGaInP inner stripe laser diodes,” Electronics Letters, Vol. 24, pp. 877-879, 1988. [33] H. Hamada, R. Hiroyama, S. Honda, M. Shono, K. Yodoshi, and T. Yamaguchi, “AlGaInP strained multiple-quantum-well visible laser diodes (lL < 630 nm band) with a multi-quantum barrier grown on misoriented substrates,” IEEE Journal of Quantum Electronics, Vol. 29, pp. 1844-1850, 1993. [34] K. Itaya, M. Ishikawa, H. Okuda, Y. Watanabe, K. Nitta, H. Shiozawa, and Y. Uematsu, “Effect of facet coating on the InGaAlP visible light laser diodes,” Applied Physics Letters, Vol. 53, pp. 1363-1365, 1988. [35] M. Ishikawa, H. Okuda, K. Itaya, H. Shiozawa, and Y. Uematsu, “Long-term reliability tests for InGaAlP visible laser diodes,” Japanese Journal of Applied Physics, Vol. 28, pp. 1615-1621, 1989. [36] H. Okuda, M. Ishikawa, H. Shiozawa, Y. Watanabe, K. Itaya, K. Nitta, G.-I. Hatakoshi, Y. Kokubun, and Y. Uematsu, “Highly reliable InGaP/InGaAlP visible light emitting inner stripe lasers with 667nm lasing wavelength,” IEEE Journal of Quantum Electronics, Vol. 25, pp. 1477-1482, 1989. [37] A. Gomyo, K. Kobayashi, S. Kawata, I. Hino, T. Suzuki,“Aging characteristics of AlGaInP/GaInP visible-light lasers (lL = 678 nm),” Electronics Letters, Vol. 23, pp. 85, 1988. [38] M. Ikeda, H. Sato, T. Ohata, K. Nakano, A. Toda, O. Kumagai, and C. Kojima, “680-nm band GaInP/AlGaInP tapered stripe laser,” Applied Physics Letters, Vol. 51, pp. 1572-1573, 1987. [39] T. Kaino, M. Fujiki, and S. Nara, “Low-loss polystyrene core-optical fibers,” Journal of Applied Physics, Vol. 52, pp. 7061-7063, 1981. [40] T. Kaino, K. Jinguji, and S. Nara, “Low loss poly(methyl methacrylate-d8) core optical fibers,” Applied Physics Letters, Vol. 42, pp. 567-569, 1983. [41] T. Kaino, K. Jinguji, and S. Nara, “Low loss poly(methyl methacrylate-d5) core optical fibers,” Applied Physics Letters, Vol. 41, pp. 802-804, 1982. [42] C.I.E. web site: www.cie.co.at/cie/ [43] Eugene Hecht, Optics, 3nd ed., Addison-Wesley, Massachusetts, 76 USA, 1998 [44] Weng W. Chow, Stephan W. Koch. Semiconductor-laser fundamentals: physics of gain materials, Springer. [45] Shun Lien Chuang, “Efficient band-structure calculations of strained quantum wells”, Physical Review B, Vol. 43, No. 42, p.p. 9649-9661, 1991 [46] R. P. Schneider, Jr., R. P. Bryan, and J. A. Lott, “Visible (657 nm) lnGaP/lnAIGaP strained quantum well vertical-cavity surface-emitting laser”, Applied Physics Letters, Vol. 60, No.7, pp. 1830-1832, 1992. [47] Peter Y. Yu, and Manuel Cardona, Fundamentals of semiconductors: physics and materials properties, Springer-Verlag, Berlin, Germany, 1996. [48] B. G. Streetman, Solid State Electronic Devices, 4nd ed., Prentice-Hall, USA, 1995. [49] G. B. Stringfellow, and M. George Craford, High Brightness Light Emitting Diodes: Semiconductors and Semimetals Volume 48, Academic Press, San Diego, California, USA, 1997. [50] S. M. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley, New York, 1981. [51] Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors”, Physica, Vol. 34, p.p. 149-154, 1967. [52] 盧廷昌, 王興宗, “半導體雷射導論”, 1st ed., 五南圖書出版公司, 2008.
|