本實驗以射頻磁控濺鍍法鍍製具 (002) 軸向的氧化鋅薄膜，搭配透明導電薄膜為上下電極，組成如電容的金屬/氧化層/金屬的三明治結構，嘗試完成一全透明電阻式記憶體，並觀察各結構的RRAM電阻轉換情形。
在金屬/氧化層/金屬中，以透明導電薄膜取代金屬，考慮透明導電薄膜電阻率：AZO電極須在鍍製時基板加熱具有較佳電阻率及穿透率；ITO在室溫鍍製即可具有良好電阻率。以上述導電薄膜為電極，製備AZO/ZnO/AZO、ITO/ZnO/ITO、Pt/ZnO/AZO結構，分別探討電極、氧化層、界面處分別對電阻轉換所造成影響。
利用此三種結構，發現界面對電阻轉換造成影響較大，使用具有高功函數Pt可具有較佳電阻轉換情形。

第一章 緒論 1
第二章 文獻回顧 3
2.1 記憶體簡介 3
2.2 電阻式記憶體簡介 5
2.2.1 前言 5
2.2.2 電阻轉換行為 6
2.2.3 電阻轉換機制 9
2.3 電阻式記憶體分類 14
2.3.1 鈣鈦礦氧化物型 14
2.3.2 過渡金屬氧化物型 15
2.4 透明導電薄膜 26
第三章 實驗方法與步驟 29
3.1 實驗架構 29
3.2 實驗流程 31
3.2.1 基板製備 31
3.2.2 氧化鋅薄膜製備 32
3.2.3 上電極製備 32
3.3 薄膜分析與量測 36
3.3.1 厚度 36
3.3.2 四點探針 36
3.3.3 結晶性 37
3.3.4 歐傑電子能譜儀縱深分析 37
3.3.5 穿透率 38
3.3.6 電性量測 39
第四章 結果與討論 40
4.1 透明導電薄膜 40
4.1.1 膜厚 40
4.1.2 電阻率 40
4.2 氧化鋅薄膜材料分析 42
4.2.1 結晶性 42
4.2.2 歐傑電子縱深分析 43
4.2.3 光穿透率 45
4.3 電性分析 46
4.3.1 AZO_thick/ZnO/AZO/glass 46
4.3.2 AZO/ZnO/AZO/glass ─ 上電極厚度 51
4.3.3 ITO/ZnO/ITO/glass ─ 氧化層 52
4.3.4 Pt/ZnO/AZO/glass ─ 界面 55
4.4 初始IV比較 58
第五章 結論 61
5.1 總結 61
5.2 未來方向 61
第六章 參考文獻 63

[1] http://www.cypress.comdocID=9284
[2] G. Müller, T. Happ, M. Kund, G. Y. Lee, N. Nagel, and R. Sezi, Technical Digest - International Electron Devices Meeting 2004 , 567.
[3] 簡昭欣, 呂正傑, 陳志遠, 張茂南, 許世祿, 趙天生, 國研科技1, 31 (2004).
[4] http://en.wikipedia.org/wiki/Random_access_memory.
[5] 劉志益, 曾俊元, 電子月刊 11, 182 (1995).
[6] http://electronics.howstuffworks.com/flash-memory.htm.
[7] T. W. Hickmott, Journal of Applied Physics 33, 2669 (1962).
[8] A. Sawa, Materials Today 11, 28 (2008).
[9] R. Waser and M. Aono, Nature Materials 6, 833 (2007).
[10] K. Tsubouchi, I. Ohkubo, H. Kumigashira, M. Oshima, Y. Matsumoto, K. Itaka, T. Ohnishi, M. Lippmaa, and H. Koinuma, Advanced Materials 19, 1711 (2007).
[11] S. Lee, H. Kim, D. J. Yun, S. W. Rhee, and K. Yong, Applied Physics Letters 95, 262113 (2009).
[12] J. W. Seo, J. W. Park, K. S. Lim, J. H. Yang, and S. J. Kang, Applied Physics Letters 93, 223505 (2008).
[13] L. P. Ma, J. Liu and Y. Yang, Applied Physics Letters 80, 2997 (2002).
[14] S. Q. Liu, N. J. Wu, and A. Ignatiev, Applied Physics Letters 76, 2749 (2000).
[15] A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, Applied Physics Letters 77, 139 (2000).
[16] S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J. S. Kim, J. S. Choi, and B. H. Park, Applied Physics Letters 85, 5655 (2004).
[17] C. L. He, F. Zhuge, X. F. Zhou, M. Li, G. C. Zhou, Y. W. Liu, J. Z. Wang, B. Chen, W. J. Su, Z. P. Liu, Y. H. Wu, P. Cui, and R. W. Li, Applied Physics Letters 95, 232101 (2009).
[18] W. H. Guan, S. B. Long, Q. Liu, M. Liu, and W. Wang, IEEE Electron Device Letters 29, 434 (2008).
[19] A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Applied Physics Letters 88, 232112 (2006).
[20] W. G. Kim and S. W. Rhee, Microelectronic Engineering 87, 98 (2010).
[21] A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Applied Physics Letters 85, 4073 (2004).
[22] J. J. Yang, M.D Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nature Nanotechnology 3, 429 (2008).
[23] D.B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453, 80 (2008).
[24] http://www.udn.com/2008/5/2/NEWS/WORLD/WOR4/4324130
.shtml
[25] V.A. Coleman and C. Jagadish, “Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties and Applications,” Chapter 1, 1 (2006).
[26] S. A. M. Lima, F. A. Sigoli, M. Jafelicci, and M. R. Davolos, International Journal of Inorganic Materials 3, 749 (2001).
[27] M. D. McCluskey and S. J. Jokela, Journal of Applied Physics 106, 071101 (2009).
[28] N. Xu, L. F. Liu, X. Sun, C. Chen, Y. Wang, D. D. Han, X. Y. Liu, R. Q. Han, J. F. Kang, and B. Yu, Semiconductor Science and Technology 23, 075019 (2008).
[29] W. Y. Chang, Y. C. Lai, T. B. Wu, S. F. Wang, F. Chen, and M. J. Tsai, Applied Physics Letters 92, 022110 (2008).
[30] A. Shih, W. D. Zhou, J. Qiu, H. J. Yang, S. Y. Chen, Z. T. Mi, and I. Shih, Nanotechnology 21, 125201 (2010).
[31] F. Verbakel, S. C. J. Meskers, and R. A. J. Janssen, Journal of Physical Chemistry C 111, 10150 (2007).
[32] S. Kim, H. Moon, D. Gupta, S. Yoo, and Y. K. Choi, IEEE Transactions on Electron Devices 56, 696 (2009).
[33] L. Shi, D. S. Shang, J. R. Sun, and B. G. Shen, Applied Physics Express 2, 101602 (2009).
[34] M. C. Chen, T. C. Chang, S. Y. Huang, S. C. Chen, C. W. Hu, C. T. Tsai, and S. M. Sze, Electrochemical and Solid State Letters 13, H191 (2010).
[35] T. Minami, Semiconductor Science and Technology 20, S35 (2005).
[36] J. M. Ting and B. S. Tsai, Materials Chemistry and Physics 72, 273 (2001).
[37] S. H. Jeong, J. W. Lee, S. B. Lee, and J. H. Boo, Thin Solid Films 435, 78 (2003).
[38] K. H. Kim, K. C. Park, and D. Y. Ma, Journal of Applied Physics 81, 7764 (1997).
[39] T. Minami, H. Sato, H. Imamoto, and S. Takata, Japanese Journal of Applied Physics 31, L257 (1992).
[40] H. Kim, C. M. Gilmore, J. S. Horwitz, A. Pique, H. Murata, G. P. Kushto, R. Schlaf, Z. H. Kafafi, and D. B. Chrisey, Applied Physics Letters 76, 259 (2000).
[41] K. H. Kim, R. A. Wibowo, and B. Munir, Materials Letters 60, 1931 (2006).
[42] B. Z. Dong, G. J. Fang, J. F. Wang, W. J. Guan, and X. Z. Zhao, Journal of Applied Physics 101, 033713 (2007).
[43] http://www.mirle.com.tw/Big%205/3_news/P_News/hotnews
_98101901.htm
[44] 鄭信民, 林麗娟, 工業材料雜誌 181, 100 (1992).
[45] 顏輝興, 工業材料雜誌 92, 147 (1994).
[46] 蔡明倫, 國立中央大學光學科學研究所碩士論文, (1995).
[47] 洪家健, 國立中山大學材料科學研究所碩士論文, (1992).
[48] http://www1.tu-darmstadt.de/surface/forschung/tco/tco-materials
.tud
[49] http://www.iue.tuwien.ac.at/phd/ayalew/node56.html.
[50] H. Iechi and K. Kudo, Ricoh Technical Report 31, 9 (2005).
[51] S. Chen, C. F. Yu, Y. S. Lin, W. J. Xie, T. W. Hsu, and D. P. Tsai, Journal of Applied Physics 104, 114314 (2008).
[52] X. Jiang, F. L. Wong, M. K. Fung, and S. T. Lee, Applied Physics Letters 83, 1875 (2003).
[53] B. N. Pal, J. Sun, B. J. Jung, E. Choi, A. G. Andreou, and H. E. Katz, Advanced Materials 20,1023 (2008).
[54] A. Asamitsu, Y. Tomioka, H. Kuwahara, and Y. Tokura, Nature 388, 50 (1997).
[55] Y. Tokura and Y. Tomioka, Journal of Magnetism and Magnetic Materials 200, 1 (1999).