由於原子層化學氣相沉積法(Atomic Layer Chemical Vapor Deposition，ALCVD)具有極佳的厚度控制能力、均勻覆蓋能力以及低溫製程等優點，所以為沉積薄膜的方法中極佳的選擇。
本實驗將採用ALCVD以TEMAH做為Hf的金屬前驅物，D2O做為氧化劑，沉積HfO2，以La(iPr2-FMD)3做為La的金屬前驅物，O2電漿做為氧化劑，沉積La2O3，製備HfO2/La2O3/HfO2 high-k疊層。
實驗設計將製備三種具不同La2O3位置的HfO2/La2O3/HfO2 high-k疊層，並分別處以PDA700℃及PDA900℃熱處理，熱處理後使用E-gun沉積Ti上電極，RF sputter沉積Pt下電極，製備成MOS電容進行電性量測。
實驗討論部分將藉由材料分析SIMS、IPXRD及XPS探討相同熱處理溫度PDA700℃下，三種具不同La2O3位置的high-k疊層電性上表現不同的原因。在探討完PDA700℃的情況後，再將PDA900℃所得結果與PDA700℃結果做比較，討論在同一結構下，造成兩種不同熱處理溫度具不同電性表現的原因。

第一章 引言 1
1.1研究背景 1
1.2研究動機 2
1.3研究目標 2
第二章 文獻回顧 3
2.1high-k材料 3
2.2high-k薄膜製備方法 7
2.2.1物理氣相沉積法 7
2.2.2化學氣相沉積法 8
2.2.3液相化學沉積法 11
2.3原子層化學氣相沉積法（ALCVD） 12
2.4ALCVD技術優缺點 16
2.5ALCVD前驅物選擇 18
2.6電漿系統 20
2.6.1電漿原理 20
2.6.2ALCVD中的電漿系統 20
2.7介電分析 22
第三章 實驗製程 25
3.1基板準備 25
3.2表面D2O電漿處理 25
3.3沉積high-k薄膜 26
3.4薄膜熱處理Post Deposition Anneal(PDA) 29
3.5製作上、下電極 29
3.6電性量測與材料分析 31
3.6.1電性量測 31
3.6.2材料分析 31
3.6.2.1Secondary Ion Mass Spectrometer(SIMS) 31
3.6.2.2In-Plane X-ray Diffraction(IPXRD) 31
3.6.2.3X-ray photoelectron spectroscopy(XPS) 32
第四章 結果與討論 33
4.1PDA700℃HfO2/La2O3/HfO2疊層 33
4.1.1SIMS分析 33
4.1.2C-V、I-V特性曲線分析 36
4.1.2.1PDA700℃不同La2O3位置對Vfb的影響 38
4.1.2.2PDA700℃不同La2O3位置對EOT的影響 41
4.1.2.3PDA700℃不同La2O3位置對Jg@Vfb-1V的影響 46
4.2PDA900℃HfO2/La2O3/HfO2疊層 48
4.2.1PDA700℃與PDA900℃之Vfb比較 49
4.2.2PDA700℃與PDA900℃之EOT比較 54
4.2.3PDA700℃與PDA900℃之Jg@Vfb-1V比較 57
第五章 結論 59
參考文獻 60

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