本實驗室目前可以成功的利用黃光微影製程製作單根奈米柱二極體元件，並利用場發射掃描式電子顯微鏡(FE-SEM)結合奈米操控系統做電性量測的優勢，我們可以量測到外加偏壓下p-n接面的影像變化，其呈現的影像與偵測器接收的二次散射電子濃度成正比的關係，藉此做影像分析，推論出空乏區寬度與p-n接面位障。另一方面，目前利用霍爾量測的方式，研究半導體塊材的載子濃度被廣泛地使用，但霍爾量測目前尚未發展出一套方式可測量一維奈米線載子濃度。有鑑於此，本論文的研究方向，提出一個方法，觀察並且量測p-n接面二極體在顯微系統下的特性變化，諸如利用FE-SEM影像(散射電子影像)直觀的觀察空乏區寬度隨逆向偏壓的影響、不同逆向偏壓電子空間位能分佈情形等等，經由關係式換算可得一維二極體的空間電場分布，藉此得到p型區與n型區域的載子濃度比例，並可加以推算半導體的p型或n型區域所攜的載子濃度。

One-dimensional Ⅲ-nitride (AlN, GaN, InN) nanorod structures are well known to have great prospects for fundamental studies and novel technological applications. However, direct determination of the carrier concentrations by Hall effect is not easy if not impossible for nanorod structures. Here, we demonstrate a method which can be applied to study single GaN nanorod p-n junctions grown by plasma-assisted molecular-beam epitaxy (PAMBE) with an in-situ multiple-probe system installed in a field-emission scanning electron microscope (FESEM). We can directly observe the electrostatic potential variation across the depletion region in the reversely biased nanorods, and the electrostatic potential can be determined directly from secondary electron images. In particular, we show that this method can be use for estimating the carrier concentration in single GaN nanorod p-n junctions.

第一章、序論
1.1前言
1.2 實驗動機
1.3文獻回顧
第二章、奈米元件製程　(Device Fabrication)
2.1 樣品製備
2.2 光學微影(photolithography)
2.3奈米柱元件製作
2.3.1奈米操控技術
2.3.2.Focus ion beam 聚焦離子束 製作電極
2.3.3黃光微影製程亂數方式製作單根奈米元件
2.4實驗流程:
第三章、量測與結果分析
3.1光性量測
3.2 氮化鎵奈米柱二極體(p-n junction GaN nanorod) 電性量測：
3.2.1二極體電性量測理論與實驗分析：
3.2.2經過熱退火處理(annealing treatment)的電性比較
3.2.3 光電壓電流特性
3.3 FE-SEM 影像探討一維p-n junction顯微分析
3.3.1 FE-SEM成像原理
3.3.2 外加偏壓下一維p-n接面影像分析
3.3.3一維p-n接面基本特性分析
3.3.4 半導體p-n接面電位能障分析
3.3.5 一維二極體空乏區寬度的實驗與理論分析
3.4載子濃度計算
3.5 小尺寸效應(Small size effect)
3.6 FESEM image討論
3.6.1改變不同掃描積分方向：
3.6.2 不同電子訊號偵測器所測的影像：
3.6.3不同加速電壓(EHT)所的到的影像：
第四章、結論
第五章、參考資料

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